2024

Optimal operation of hole spin qubits
Marion Bassi, Esteban-Alonso Rodríguez-Mena, Boris Brun, Simon Zihlmann, Thanh Nguyen, Victor Champain, José Carlos Abadillo-Uriel, Benoit Bertrand, Heimanu Niebojewski, Romain Maurand, Yann-Michel Niquet, Xavier Jehl, Silvano De Franceschi and Vivien Schmitt
arXiv.2412.13069 (2024)
Abstract Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast, electric-field-mediated control stemming from their intrinsically large spin-orbit coupling [1, 2]. This key feature is accompanied by an undesirable susceptibility to charge noise, which usually limits qubit coherence. Here, by varying the magnetic-field orientation, we experimentally establish the existence of ``sweetlines’ in the polar-azimuthal manifold where the qubit is insensitive to charge noise. In agreement with recent predictions [3], we find that the observed sweetlines host the points of maximal driving efficiency, where we achieve fast Rabi oscillations with quality factors as high as 1200. Furthermore, we demonstrate that moderate adjustments in gate voltages can significantly shift the sweetlines. This tunability allows multiple qubits to be simultaneously made insensitive to electrical noise, paving the way for scalable qubit architectures that fully leverage all-electrical spin control. The conclusions of this experimental study, performed on a silicon metal-oxide-semiconductor device, are expected to apply to other implementations of hole spin qubits.

To be published arXiv

A two-dimensional 10-qubit array in germanium with robust and localised qubit control
Valentin John, Cécile X. Yu, Barnaby van Straaten, Esteban A. Rodríguez-Mena, Mauricio Rodríguez, Stefan Oosterhout, Lucas E. A. Stehouwer, Giordano Scappucci, Stefano Bosco, Maximilian Rimbach-Russ, Yann-Michel Niquet, Francesco Borsoi and Menno Veldhorst
arXiv.2412.16044 (2024)
Abstract Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabrication, and qubit control to realise a two-dimensional 10-spin qubit array, with qubits coupled up to four neighbours that can be controlled with high fidelity. By exploring the large parameter space of gate voltages and quantum dot occupancies, we demonstrate that plunger gate driving in the three-hole occupation enhances electric-dipole spin resonance (EDSR), creating a highly localised qubit drive. Our findings, confirmed with analytical and numerical models, highlight the crucial role of intradot Coulomb interaction and magnetic field direction. Furthermore, the ability to engineer qubits for robust control is a key asset for further scaling.

To be published arXiv

Geometry of the dephasing sweet spots of spin-orbit qubits
Lorenzo Mauro\(^{\dagger}\), Esteban A. Rodríguez-Mena\(^{\dagger}\), Marion Bassi, Vivien Schmitt and Yann-Michel Niquet
\(^{\dagger}\)Equal contribution
Physical Review B, 109, 155406 (2024)
Abstract The dephasing time of spin-orbit qubits is limited by the coupling with electrical and charge noise. However, there may exist “dephasing sweet spots” where the qubit decouples (to first order) from the noise so that the dephasing time reaches a maximum. Here we discuss the nature of the dephasing sweet spots of a spin-orbit qubit electrically coupled to some fluctuator. We characterize the Zeeman energy \(E_\mathrm{Z}\) of this qubit by the tensor \(G\) such that \(E_\mathrm{Z}=\mu_B\sqrt{\vec{B}^\mathrm{T}G\vec{B}}\) (with \(\mu_B\) the Bohr magneton and \(\vec{B}\) the magnetic field), and its response to the fluctuator by the derivative \(G^\prime\) of \(G\) with respect to the fluctuating field. The geometrical nature of the sweet spots on the unit sphere describing the magnetic field orientation depends on the sign of the eigenvalues of \(G^\prime\). We show that sweet spots usually draw lines on this sphere. We then discuss how to characterize the electrical susceptibility of a spin-orbit qubit with test modulations on the gates. We apply these considerations to a Ge/GeSi spin qubit heterostructure, and discuss the prospects for the engineering of sweet spots.

Phys. Rev. B arXiv